3/10/14 approvals z ul recognised, file no. e91231 package code " ff " 'x' specification approvals z vde 0884 in 3 available lead form : - - std - g form - smd approved to cecc 00802 description the IS627 is an optically coupled isolator consisting of infrared light emitting diode and a high voltage npn silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a standard 4 pin dual in line plastic package. features z options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. z high isolation voltage (5.3kv rms ,7.5kv pk ) z high current transfer ratio ( 1000% min) high bv ceo (300v min.) low input current 1ma i f applications z modems z copiers, facsimiles z numerical control machines z signal transmission between systems of different potentials and impedances high voltage darlington output optically coupled isolator absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 125c operating temperature -30c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 6v power dissipation 70mw output transistor collector-emitter voltage bv ceo 300v emitter-collector voltage bv eco 0.1v collector current i c 150ma power dissipation 150mw power dissipation total power dissipation 200mw 10.16 0.26 option g 7.62 1.2 3.0 4.0 3.0 7.0 6.0 0.5 0.5 7.62 0.26 13 max 2.54 dimensions in mm 5.08 4.08 4 3 1 2 10.46 9.86 0.6 0.1 1.25 0.75 option sm surface mount 3.35 IS627 db92688 isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581
db92688 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.4 v i f = 10ma reverse current (i r )10 av r = 4v output collector-emitter breakdown (bv ceo ) 300 v i c = 0.1ma emitter-collector breakdown (bv eco ) 0.1 v i e = 10 a collector-emitter dark current (i ceo ) 10 200 na v ce = 200v coupled current transfer ratio (ctr) 1000 4000 15000 % 1ma i f , 2v v ce collector-emitter saturation voltagev ce(sat) 1.2 v 20ma i f , 100ma i c input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 5x10 10 v io = 500v (note 1) input-output capacitance cf 1 pf v = 0, f =1mhz cut-off frequency fc 7 khz v ce = 2v, i c = 20ma, r l = 100 , ?3 db output rise time tr 100 300 sv ce = 2v, i c = 20ma, output fall time tf 20 100 sr l = 100 note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 3/10/14 electrical characteristics ( t a = 25c unless otherwise noted ) input output 10% 90% 10% 90% t off t r t on t f output v cc i c = 20ma input figure 1 100
0 0.5 1.0 relative current transfer ratio relative current transfer ratio vs. ambient temperature 0 0.4 0.8 1.2 1.6 2.0 40 60 collector-emitter voltage v ce ( v ) 20 0 -30 0 25 50 75 100 ambient temperature t a ( c ) collector current vs. collector-emitter voltage 1.5 -30 0 25 50 75 100 ambient temperature t a ( c ) collector dark current i ceo (a) collector dark current vs. ambient temperature v ce = 200v 50 -30 0 25 50 75 100 125 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 0 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature 100 forward current i f (ma) -30 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 i f = 20ma i c = 100ma 80 100 120 140 collector current i c (ma) i f = 0.5ma 1ma 2ma 4ma 10ma i f = 1ma v ce = 2v 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 db92688 3/10/14
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